FGA6065ADF دیتاشیت

FGA6065ADF

مشخصات دیتاشیت

نام دیتاشیت FGA6065ADF
حجم فایل 70.016 کیلوبایت
نوع فایل pdf
تعداد صفحات 10

مشاهده دیتاشیت FGA6065ADF

دانلود دیتاشیت

سایر مستندات

FGA6065ADF 10 pages

مشخصات فنی

  • RoHS: true
  • Type: Trench Field Stop
  • Category: Triode/MOS Tube/Transistor/IGBTs
  • Datasheet: onsemi FGA6065ADF
  • Operating Temperature: 55°C~+175°C@(Tj)
  • Collector Current (Ic): 120A
  • Power Dissipation (Pd): 306W
  • Turn?on Delay Time (Td(on)): 25.6ns
  • Turn?on Switching Loss (Eon): 2.46mJ
  • Total Gate Charge (Qg@Ic,Vge): 84nC
  • Turn?off Delay Time (Td(off)): 71ns
  • Pulsed Collector Current (Icm): 180A
  • Diode Reverse Recovery Time (Trr): 110ns
  • Collector-Emitter Breakdown Voltage (Vces): 650V
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 2.3V@15V,60A
  • Package: TO-3P
  • Manufacturer: onsemi
  • Series: -
  • Packaging: Tube
  • Part Status: Active
  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 120A
  • Current - Collector Pulsed (Icm): 180A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
  • Power - Max: 306W
  • Switching Energy: 2.46mJ (on), 520µJ (off)
  • Input Type: Standard
  • Gate Charge: 84nC
  • Td (on/off) @ 25°C: 25.6ns/71ns
  • Test Condition: 400V, 60A, 6Ohm, 15V
  • Reverse Recovery Time (trr): 110ns
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3PN
  • Base Part Number: FGA60
  • detail: IGBT Trench Field Stop 650V 120A 306W Through Hole TO-3PN

محصولات مشابه